Published in
Royal Society of Chemistry, Nanoscale, 18(10), p. 8578-8584
DOI: 10.1039/c8nr00863a
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Lead-free, air-stable hybrid organic–inorganic perovskite resistive switching memory with ultrafast switching and multilevel data storage
Journal article published in 2018 by
Bohee Hwang,
Jang-Sik Lee 
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Abstract
The resistive switching memory based on a lead-free bismuth halide perovskite exhibits fast switching, multilevel data storage, and long-term air stability.