Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 1(6), p. 119-126
DOI: 10.1039/c7tc04732k
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Electronic band structures of undoped and P-doped Si nanocrystals embedded in SiO2
Journal article published in 2018 by
E. Arduca 
,
G. Seguini,
C. Martella ,
A. Lamperti,
E. Napolitani ,
D. De Salvador,
G. Nicotra,
M. Scuderi,
C. Spinella,
M. Perego
,
G. Seguini,
C. Martella ,
A. Lamperti,
E. Napolitani ,
D. De Salvador,
G. Nicotra,
M. Scuderi,
C. Spinella,
M. Perego
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Abstract
Conduction and valence band maxima in Si nanocrystals (d = 4.2 ± 0.9 nm) embedded in SiO2 as a function of P concentration.