Published in
Royal Society of Chemistry, Nanoscale, 46(9), p. 18392-18401
DOI: 10.1039/c7nr05201d
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Strain relaxation and ambipolar electrical transport in GaAs/InSb core–shell nanowires
Journal article published in 2017 by
Torsten Rieger,
Patrick Zellekens 
,
Natalia Demarina,
Ali Al Hassan,
Franz Josef Hackemüller,
Hans Lüth,
Ullrich Pietsch,
Thomas Schäpers ,
Detlev Grützmacher ,
Mihail Ion Lepsa
,
Natalia Demarina,
Ali Al Hassan,
Franz Josef Hackemüller,
Hans Lüth,
Ullrich Pietsch,
Thomas Schäpers ,
Detlev Grützmacher ,
Mihail Ion Lepsa
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Abstract
The growth, crystal structure, strain relaxation and room temperature transport characteristics of GaAs/InSb core–shell nanowires grown using molecular beam epitaxy are investigated.