Francesco Iannuzzo

All papers authored by Francesco Iannuzzo

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2020 He Du

, Paula Diaz Reigosa

, Paula Diaz Reigosa, Lorenzo Ceccarelli

, Francesco Iannuzzo

Impact of Repetitive Short-Circuit Tests on the Normal Operation of SiC MOSFETs Considering Case Temperature Influence

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2019 Paula Diaz Reigosa

, Haoze Luo

, Francesco Iannuzzo

Implications of Ageing Through Power Cycling on the Short-Circuit Robustness of 1.2-kV SiC mosfets

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Jinkui He, Ariya Sangwongwanich, Yongheng Yang, Francesco Iannuzzo

Thermal Performance Evaluation of 1500-VDC Photovoltaic Inverters Under Constant Power Generation Operation

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Lorenzo Ceccarelli

, Ramchandra M. Kotecha

, Amir Sajjad Bahman

, Francesco Iannuzzo

, Homer Alan Mantooth

Mission-Profile-Based Lifetime Prediction for a SiC mosfet Power Module Using a Multi-Step Condition-Mapping Simulation Strategy

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Ionut Vernica, Per Thastrup Jensen, Huai Wang, Francesco Iannuzzo

, Susanne Otto, Frede Blaabjerg

Loss and Thermal Modeling of Metal Oxide Varistors (MOV) Under Standard Current Surge Mission Profile

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D. Marroqui, A. Garrigos

, J. M. Blanes, R. Gutierrez, E. Maset, F. Iannuzzo

SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark

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H. Du, L. Ceccarelli, F. Iannuzzo

, P. D. Reigosa

Implications of short-circuit events on power cycling of 1.2-kV/20-A SiC MOSFET power modules

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Maogong Jiang, Guicui Fu, Martin Bendix Fogsgaard, Amir Sajjad Bahman, Yongheng Yang, Francesco Iannuzzo

Wear-out evolution analysis of multiple-bond-wires power modules based on thermo-electro-mechanical FEM simulation

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L. Ceccarelli, A. S. Bahman, F. Iannuzzo

Impact of device aging in the compact electro-thermal modeling of SiC power MOSFETs

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Nick Baker, Francesco Iannuzzo

, Szymon Beczkowski, Peter Kjear Kristensen

Proof-of-Concept for a Kelvin-Emitter On-Chip Temperature Sensor for Power Semiconductors

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Maogong Jiang, Guicui Fu, Lorenzo Ceccarelli, He Du, Martin Bendix Fogsgaard, Amir Sajjad Bahman, Yongheng Yang, Francesco Iannuzzo

Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires

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L. Ceccarelli, R. Wu, F. Iannuzzo

Evaluating IGBT temperature evolution during short circuit operations using a TSEP-based method

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Francesco Iannuzzo

, Laili Wang

, John Shen

Guest Editorial: Special Section on Modeling, Design, and Application of Next-Generation Power Components

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Paula Diaz Reigosa

, Francesco Iannuzzo

, Chiara Corvasce, Munaf Rahimo

Modeling of IGBT With High Bipolar Gain for Mitigating Gate Voltage Oscillations During Short Circuit

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Mohsen Akbari, Paula Diaz Reigosa, Amir Sajjad Bahman, Lorenzo Ceccarelli, Francesco Iannuzzo

, Mohammad Tavakoli Bina

Enhancement of Thermo-mechanical Behavior of IGBT Modules through Engineered Threshold Voltages

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Yue Gao, Shuhei Takata, Chuantong Chen, Shijo Nagao, Katsuaki Suganuma, Amir Sajjad Bahman, Francesco Iannuzzo

Reliability analysis of sintered Cu joints for SiC power devices under thermal shock condition

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V. N. Popok

, S. Buhrkal-Donau, B. Czerny, G. Khatibi, H. Luo, F. Iannuzzo

, K. B. Pedersen

Comparative study of wire bond degradation under power and mechanical accelerated tests

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Tomas Lledo-Ponsati, Amir Sajjad Bahman, Francesco Iannuzzo

, Daniel Montesinos-Miracle, Samuel Galceran Arellano

Reliability Analysis of a 3-leg 4-wire Inverter under Unbalanced Loads and Harmonic Injection

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This paper was not found in any repository; the policy of its publisher is unknown or unclear.

Yue Gao, Chuantong Chen, Shijo Nagao, Katsuaki Suganuma, Amir Sajjad Bahman, Francesco Iannuzzo

Highly Reliable Package using Cu Particles Sinter Paste for Next Generation Power Devices

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P. Diaz Reigosa, C. Papadopoulos, F. Iannuzzo

, C. Corvasce, M. Rahimo

Effects of the HV-BIGT Design Elements on the High-Frequency Oscillation Instability during Short Circuit Transients

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All papers authored by Francesco Iannuzzo