Yao-Feng Chang - Dissemin

All papers authored by Yao-Feng Chang

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Ying-Chen Chen

, Szu-Tung Hu, Chih-Yang Lin, Burt Fowler, Hui-Chun Huang, Chao-Cheng Lin, Sungjun Kim

, Yao-Feng Chang

, Jack C. Lee

Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications

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2017 Sungjun Kim

, Yao-Feng Chang

, Min-Hwi Kim, Byung-Gook Park

Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x

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Cheng-Chih Hsieh

, Yao-Feng Chang

, Yoocharn Jeon, Anupam Roy, Davood Shahrjerdi, Sanjay K. Banerjee

Short-Term Relaxation in HfOx/CeOx Resistive Random Access Memory With Selector

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M. Q. Guo, Y. C. Chen, C. Y. Lin, Y. F. Chang

, Burt Fowler, Q. Q. Li, J. Lee, Y. G. Zhao

Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO3 devices

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This paper is made freely available by the publisher.

Ying-Chen Chen, Yao-Feng Chang

, Xiaohan Wu, Fei Zhou, Meiqi Guo, Chih-Yang Lin, Cheng-Chih Hsieh, Burt Fowler, Ting-Chang Chang, Jack C. Lee

Dynamic conductance characteristics in HfOx-based resistive random access memory

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Sungjun Kim

, Yao-Feng Chang

, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Ying-Chen Chen

, Jong-Ho Lee, Byung-Gook Park

Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device

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Chih-Yang Lin, Po-Hsun Chen

, Ting-Chang Chang

, Kuan-Chang Chang, Sheng-Dong Zhang, Tsung-Ming Tsai, Chih-Hung Pan, Min-Chen Chen, Yu-Ting Su, Yi-Ting Tseng, Yao-Feng Chang

, Ying-Chen Chen, Hui-Chun Huang, Simon M. Sze

Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode

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This paper is available in a repository.

2016 Cheng-Chih Hsieh, Anupam Roy, Yao-Feng Chang

, Davood Shahrjerdi, Sanjay K. Banerjee

A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems

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Yao-Feng Chang

, Burt Fowler, Ying-Chen Chen, Jack C. Lee

Proton exchange reactions in SiOx-based resistive switching memory: Review and insights from impedance spectroscopy

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Meiqi Guo, Ying-Chen Chen, Yao-Feng Chang

, Xiaohan Wu, Burt Fowler, Yonggang Zhao, Jack C. Lee

Characteristics of Nb-doped SrTiO3 and HfO2-based selector devices

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Ying-Chen Chen, Yao-Feng Chang

, Burt Fowler, Fei Zhou, Xiaohan Wu, Cheng-Chih Hsieh, Heng-Lu Chang, Chih-Hung Pan, Min-Chen Chen, Kuan-Chang Chang, Tsung-Ming Tsai, Ting-Chang Chang, Jack C. Lee

Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage ( 2V) operation

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Yao-Feng Chang

, Burt Fowler, Ying-Chen Chen, Fei Zhou, Chih-Hung Pan, Ting-Chang Chang, Jack C. Lee

Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

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Yao-Feng Chang

, Burt Fowler, Fei Zhou, Ying-Chen Chen, Jack C. Lee

Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory

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Fei Zhou, Yao-Feng Chang

, Ying-Chen Chen, Xiaohan Wu, Ye Zhang, Burt Fowler, Jack C. Lee

A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiOx layer

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2015 Fei Zhou, Lauren Guckert, Yao-Feng Chang

, Earl E. Swartzlander, Jack Lee

Bidirectional voltage biased implication operations using SiOx based unipolar memristors

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Yao-Feng Chang

, Burt Fowler, Fei Zhou, Jack C. Lee

(Invited) Intrinsic Unipolar SiOx-Based Resistive Switching Memory: Characterization, Mechanism and Applications

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Shixuan Yang, Ying-Chen Chen, Luke Nicolini, Praveenkumar Pasupathy, Jacob Sacks, Becky Su, Russell Yang, Daniel Sanchez, Yao-Feng Chang

, Pulin Wang, David Schnyer, Dean Neikirk, Nanshu Lu

“Cut-and-Paste” Manufacture of Multiparametric Epidermal Sensor Systems

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Cheng-Chih Hsieh

, Anupam Roy, Yao-Feng Chang

, Amritesh Rai, Sanjay Banerjee

Cerium oxide based bipolar resistive switching memory with low operation voltage and high resistance ratio

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Yao-Feng Chang

, Burt Fowler, Fei Zhou, Jack C. Lee

Study of SiOx-based resistive switching memory (ReRAM) in integrated one diode — One resistor (1D-1R) architecture

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All papers authored by Yao-Feng Chang