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Royal Society of Chemistry, Physical Chemistry Chemical Physics, 29(19), p. 18988-18995, 2017

DOI: 10.1039/c7cp03120c

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Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device

Journal article published in 2017 by Sungjun Kim ORCID, Yao-Feng Chang ORCID, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Ying-Chen Chen ORCID, Jong-Ho Lee, Byung-Gook Park ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Here we demonstrate low-power resistive switching in a Ni/SiNy/SiNx/p++-Si device by proposing a double-layered structure (SiNy/SiNx), where the two SiN layers have different trap densities.