Published in
American Institute of Physics, Applied Physics Letters, 3(111), p. 033509, 2017
DOI: 10.1063/1.4985268
Links
Tools
Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Data provided by 