338 papers found
Refreshing results…
Transient enhanced diffusion of dopant in preamorphised Si: The role of EOR defects
A particular epitaxial Si1 − yCy alloy growth mode on Si(001) evidenced by cross-sectional transmission electron microscopy
Interactions between Dopants and End-of-Range Defects in Silicon
High strain effects evidenced by Raman scattering in arsenic clusters in As‐implanted GaAs
Synthesis of semi-insulating GaAs by As implantation and thermal annealing: structural and electrical properties
Variation of end of range density with ion beam energy and the predictions of the “excess interstitials” model
Phosphourus-enhanced diffusion of antimony due to generation of self-interstitials
Phosphorus-enhanced diffusion of antimony due to generation of self-interstitials
Observation of Si out-diffusion related defects in SiC growth on Si(001)
Relation Between Structure and Carrier Lifetime in As-Implanted GaAs
Atomic Structure of the Interfaces Between Silicon Directly Bonded Wafers
Direct Wafer Bonding of Preamorphized Silicon Wafers.
Thermal conductivity studies on the curing process of diol-modified epoxy systems
Regrowth behaviour of Si1−xGex/Si structures formed by Ge+ ion implantation and post amorphisation
Identification of EOR defects due to the regrowth of amorphous layers created by ion bombardment
Recrystallization of boron-doped and undoped preamorphized silicon layers by rapid and conventional thermal annealing
Crystallisation Behaviour of Amorphous Thin Si Films Produced by Low Pressure Chemical Vapor Deposition
Photovoltaic Solar Cells: State of the Art, National Strategies and Perspectives
Arsenic implantation into GaAs: a SOI technology for compound semiconductors?
Lateral and vertical isolation by arsenic implantation into MOCVD-grown GaAs layers
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