Anlan Chen
0000-0002-0044-4328
Institute of Industrial Science
4 papers found
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A novel approach to Si0.5Ge0.5 channel FinFET fabrication: utilizing a three-layer SiGe strain relaxation buffer and In-Situ phosphorus doping
Si0.5Ge0.5 Channel FinFET Preparation on an In Situ Doped SiGe SRB and Its Electrical Characteristics Optimization
SiGe Fin field effect transistor (FET) with STI liner skipping and channel passivation engineering
Optimization of SiGe interface properties with ozone oxidation and a stacked HfO2/Al2O3 dielectric for a SiGe channel FinFET transistor
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