Papers authored by U. Wahl
Refreshing results…
2000
U. Wahl 
,
A. Vantomme,
G. Langouche,
J. P. Araújo,
L. Peralta,
J. G. Correia
,
A. Vantomme,
G. Langouche,
J. P. Araújo,
L. Peralta,
J. G. Correia
Lattice location of implanted Cu in highly doped Si
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U. Wahl ,
A. Vantomme,
G. Langouche,
J. G. Correia,
Isolde Collaboration
,
A. Vantomme,
G. Langouche,
J. G. Correia,
Isolde Collaboration
Lattice location and stability of ion implanted Cu in Si
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U. Wahl ,
J. G. Correia,
A. Vantomme,
G. Langouche
,
J. G. Correia,
A. Vantomme,
G. Langouche
Lattice location of implanted Cu in Si
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U. Wahl ,
J. G. Correia,
J. P. Araújo,
A. Vantomme,
G. Langouche
,
J. G. Correia,
J. P. Araújo,
A. Vantomme,
G. Langouche
Er-O clustering and its influence on the lattice sites of Er in Si
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U. Wahl ,
A. Vantomme,
G. Langouche,
The Isolde collaboration
,
A. Vantomme,
G. Langouche,
The Isolde collaboration
Lattice sites and damage annealing of Er in low-dose implanted GaAs
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J. P. Araújo,
J. G. Correia,
U. Wahl ,
J. G. Marques,
E. Alves,
V. S. Amaral,
A. A. Lourenço,
Galindo,
T. Von Papen,
J. P. Senateur,
F. Weiss,
A. Vantomme,
G. Langouche,
A. A. Melo,
Da Silva
and 2 other authors
,
J. G. Marques,
E. Alves,
V. S. Amaral,
A. A. Lourenço,
Galindo,
T. Von Papen,
J. P. Senateur,
F. Weiss,
A. Vantomme,
G. Langouche,
A. A. Melo,
Da Silva
and 2 other authors
Stability studies of Hg implanted YBa2Cu3O6+x
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J. P. Araújo,
J. G. Correia,
U. Wahl ,
J. G. Marques,
E. Alves,
V. S. Amaral,
A. A. Lourenço,
Galindo,
T. Von Papen,
J. P. Senateur,
F. Weiss,
A. Vantomme,
G. Langouche,
A. A. Melo,
Da Silva
and 2 other authors
,
J. G. Marques,
E. Alves,
V. S. Amaral,
A. A. Lourenço,
Galindo,
T. Von Papen,
J. P. Senateur,
F. Weiss,
A. Vantomme,
G. Langouche,
A. A. Melo,
Da Silva
and 2 other authors
Stability and diffusion of Hg implanted YBa2Cu3O6+x
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1998
L. A. T. Hilgers,
L. Ghenne,
I. Nicolas,
U. Wahl ,
M. Fochesato,
A. Vantomme,
G. Lejeune,
M. Harmsen,
G. Langouche,
J. Linnros,
B. Boon,
Jg G. Correia,
F. Priolo,
L. Canham
,
M. Fochesato,
A. Vantomme,
G. Lejeune,
M. Harmsen,
G. Langouche,
J. Linnros,
B. Boon,
Jg G. Correia,
F. Priolo,
L. Canham
The influence of oxygen on the lattice sites of rare earths in silicon
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U. Wahl ,
J. G. Correia,
S. Cardoso,
J. G. Marques,
A. Vantomme,
G. Langouche
,
J. G. Correia,
S. Cardoso,
J. G. Marques,
A. Vantomme,
G. Langouche
Electron emission channeling with position-sensitive detectors
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A. Vantomme,
U. Wahl ,
M. F. Wu,
S. Hogg,
H. Pattyn,
G. Langouche,
H. Bender
,
M. F. Wu,
S. Hogg,
H. Pattyn,
G. Langouche,
H. Bender
Backscattering/channeling study of high-dose rare-earth implants into Si
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