Joonho Back
0000-0001-7087-4836
University of California
11 papers found
Refreshing results…
Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror
Demonstration of high wall-plug efficiency III-nitride micro-light-emitting diodes with MOCVD-grown tunnel junction contacts using chemical treatments
Blue semipolar InGaN microcavity light-emitting diode with varying cavity lengths from 113 to 290 nm
Enhanced external quantum efficiency of III-nitride micro-light-emitting diodes using vertical and transparent package
High efficiency blue InGaN microcavity light-emitting diode with a 205 nm ultra-short cavity
Violet semipolar (20-2-1) InGaN microcavity light-emitting diode with a 200 nm ultra-short cavity length
Blue semipolar III-nitride vertical-cavity surface-emitting lasers
Progress in Semipolar GaN-based VCSELs
Inhomogeneous Current Injection and Filamentary Lasing of Semipolar (2021¯) Blue GaN‐Based Vertical‐Cavity Surface‐Emitting Lasers with Buried Tunnel Junctions
Demonstration of blue semipolar (202¯1¯) GaN-based vertical-cavity surface-emitting lasers
Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs
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