Maxime Legallais - Dissemin

All papers authored by Maxime Legallais

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2024 William Berthou

, Maxime Legallais

, Stéphanie Sorieul

, Gunay Yildirim, Bruno Bousquet

, Vincent Motto‐Ros

, Frédéric Le Cras

High‐Throughput Experimentation Unveils Composition – Structure – Conductivity Relationships in the Extended LiPON System

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2022 S. Boubenia

, G. Lefevre, M. Legallais

, S. Labau, F. Bassani

, M. B. Hachemi

, G. Ghibaudo, B. Salem

Influence of substrate biasing on structural, chemical and electrical properties of Al₂O₃ thin films deposited by PEALD

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Sabria Benrabah, Maxime Legallais

, Pascal Besson, Simon Ruel, Laura Vauche, Bernard Pelissier, Chloé Thieuleux, Bassem Salem, Matthew Charles

H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces

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Tabassom Arjmand, Maxime Legallais

, Thi Thu Thuy Nguyen, Pauline Serre, Monica Vallejo-Perez, Fanny Morisot, Bassem Salem

, Céline Ternon

Functional Devices from Bottom-Up Silicon Nanowires: A Review

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2021 Maxime Legallais

, Gauthier Lefevre, Simon Martin, Sébastien Labau, Franck Bassani, Bernard Pélissier, Thierry Baron, Laura Vauche, Cyrille Le Royer, Matthew Charles, William Vandendaele, Marc Plissonnier, Romain Gwoziecki, Bassem Salem

Impact of Substrate Biasing During AlN Growth by PEALD on Al₂O₃/AlN/GaN MOS Capacitors

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Anass Benayad, Diddo Diddens, Andreas Heuer, Anand Narayanan Krishnamoorthy, Moumita Maiti, Frédéric Le Cras, Maxime Legallais

, Fuzhan Rahmanian, Yuyoung Shin, Helge Stein, Martin Winter, Christian Wölke, Peng Yan, Isidora Cekic‐Laskovic

High‐Throughput Experimentation and Computational Freeway Lanes for Accelerated Battery Electrolyte and Interface Development Research

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2020 Maxime Legallais

, Thi Thu Thuy Nguyen, Thibauld Cazimajou, Mireille Mouis, Tabassom Arjmand

, Bassem Salem

, Céline Ternon

Role played by the nanowire/nanowire junctions in the electrical properties of semiconductor percolating silicon nanowire networks

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Tabassom Arjmand

, Maxime Legallais

, Thibault Haffner, Maryline Bawedin, Céline Ternon

, Bassem Salem

Development of a robust fabrication process for single silicon nanowire-based omega gate transistors on polyamide substrate

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Maxime Legallais

, Hussein Mehdi

, Sylvain David, Franck Bassani

, Sébastien Labau, Bernard Pelissier, Thierry Baron, Eugenie Martinez, Gérard Ghibaudo, Bassem Salem

Improvement of AlN film quality using plasma enhanced atomic layer deposition with substrate biasing

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T. Cazimajou, M. Mouis, M. Legallais

, T. T. T. Nguyen, C. Ternon, B. Salem, G. Ghibaudo

Analysis of the role of inter-nanowire junctions on current percolation effects in silicon nanonet field-effect transistors

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2019 Maxime Legallais

, Thi Thu Thuy Nguyen, Thibauld Cazimajou, Mireille Mouis, Bassem Salem

, Céline Ternon

Material engineering of percolating silicon nanowire networks for reliable and efficient electronic devices

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Thi Thu Thuy Nguyen, Thibauld Cazimajou, Maxime Legallais

, Tabassom Arjmand, Viet Huong Nguyen

, Mireille Mouis, Bassem Salem

, Eric Robin, C. Ternon

Monolithic fabrication of nano-to-millimeter scale integrated transistors based on transparent and flexible silicon nanonets

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T. Cazimajou, M. Legallais

, T. T. T. Nguyen, M. Mouis, C. Ternon, B. Salem, G. Ghibaudo

Low Temperature Electrical Characteristics of Si Nanonet Field Effect Transistors

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Ganesh Jayakumar

, Maxime Legallais

, Per-Erik Hellström, Mireille Mouis, Isabelle Pignot-Paintrand, Valérie Stambouli

, Céline Ternon

, Mikael Östling

Wafer-scale HfO2 encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment

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2018 Thi Thu Thuy Nguyen, Maxime Legallais

, Fanny Morisot

, Thibauld Cazimajou, Valerie Stambouli-Sene

, Mireille Mouis, Bassem Salem

, Céline Ternon

First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection

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T. Cazimajou, M. Legallais

, M. Mouis, C. Ternon, B. Salem, G. Ghibaudo

Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion

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M. Legallais

, T. T. T. Nguyen, M. Mouis, B. Salem, E. Robin, P. Chenevier, C. Ternon

An innovative large scale integration of silicon nanowire-based field effect transistors

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M. Legallais

, S. Fourcade, U.-C. Chung, D. Michau, M. Maglione, F. Mauvy, C. Elissalde

Fast re-oxidation kinetics and conduction pathway in Spark Plasma Sintered ferroelectric ceramics

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2017 Thomas Demes, Céline Ternon, Fanny Morisot

, David Riassetto, Maxime Legallais

, Hervé Roussel, Michel Langlet

Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

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Romain Bange, Edwige Bano, Laetitia Rapenne, Sébastien Labau, Bernard Pelissier, Maxime Legallais

, Bassem Salem, V. Stambouli

Chemical Stability of Si-SiC Nanostructures under Physiological Conditions

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All papers authored by Maxime Legallais