All papers authored by Georgy Astakhov
Refreshing results…
,
Alessandro Principi,
David Saleta Reig ,
Alexander Block ,
Sebin Varghese ,
Steffen Schreyeck,
Karl Brunner,
Grzegorz Karczewski,
Igor Ilyakov,
Oleksiy Ponomaryov,
Thales V. A. G. de Oliveira ,
Min Chen ,
Jan-Christoph Deinert ,
Carmen Gomez Carbonell,
Sergio O. Valenzuela
and 4 other authors
Milliwatt terahertz harmonic generation from topological insulator metamaterials
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Tobias Linkewitz,
Timo Steidl,
Raphael Wörnle,
Di Liu,
Erik Hesselmeier,
Vadim Vorobyov,
Andrej Denisenko,
Mario Hentschel ,
Christian Gobert,
Patrick Berwian ,
Georgy V. Astakhov ,
Wolfgang Knolle
and 7 other authors
Download from www.nature.com
,
C. Kasper,
A. V. Poshakinskiy,
A. N. Anisimov,
E. N. Mokhov,
A. Sperlich ,
S. A. Tarasenko,
P. G. Baranov,
G. V. Astakhov ,
V. Dyakonov
Excitation and coherent control of spin qudit modes in silicon carbide at room temperature
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,
V. Dyakonov ,
G. V. Astakhov
Spin and Optical Properties of Silicon Vacancies in Silicon Carbide − A Review
Download from onlinelibrary.wiley.com
,
V. Dyakonov ,
G. V. Astakhov
Download from dx.doi.org
,
V. Dyakonov
High-Precision Angle-Resolved Magnetometry with Uniaxial Quantum Centers in Silicon Carbide
Download from www.researchgate.net
,
P. G. Baranov,
G. V. Astakhov ,
V. Dyakonov
Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
Download from www.nature.com
,
T. Hertel,
V. Dyakonov
Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide
Download from arxiv.org
,
P. G. Baranov,
V. Dyakonov ,
G. V. Astakhov
Room-temperature quantum microwave emitters based on spin defects in silicon carbide
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,
G. Tkachov ,
C. Brüne,
H. Buhmann,
L. W. Molenkamp,
A. Pimenov
Terahertz quantum Hall effect of Dirac fermions in a topological insulator
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,
Mathias Mühlbauer,
Christoph Brüne,
Hartmut Buhmann,
Laurens W. Molenkamp
Room temperature electrically tunable terahertz Faraday effect
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,
A. A. Soltamova,
P. G. Baranov,
V. A. Ilyin,
G. V. Astakhov
Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
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