Arturas Vailionis
0000-0001-5878-1864
Stanford Medicine
119 papers found
Refreshing results…
AFM and complementary XRD measurements of in situ grown YBCO films obtained by pulsed laser deposition
Spectroscopic and X-ray diffraction study of high Tc epitaxial YBCO thin films obtained by pulsed laser deposition
Ion beam and complementary SEM and XRD characterization of YBa2Cu3O7−x films obtained by pulsed laser deposition
Thickness-dependent properties of (110)-oriented La1.2Sr1.8Mn2O7 thin films
In situ grown epitaxial YBa2Cu3O7−x thin films by pulsed laser deposition under reduced oxygen pressure during cool-down time
Polarized XANES and EXAFS spectroscopic investigation into copper(II) complexes on vermiculite
Molecular-level investigation into copper complexes on vermiculite: Effect of reduction of structural iron on copper complexation
Determination of absolute orientation-dependent TiN(001) and TiN(111) step energies
A multichannel superconducting tunnel junction detector for high-resolution X-ray spectroscopy of magnesium diboride films
In situ high-temperature scanning tunneling microscopy studies of two-dimensional TiN island coarsening kinetics on TiN(001)
In situ high-temperature scanning tunneling microscopy studies of two-dimensional TiN island coarsening kinetics on TiN
Absolute orientation-dependent TiN(001) step energies from two-dimensional equilibrium island shape and coarsening measurements on epitaxial TiN(001) layers (vol 513, pg 468, 2002)
Erratum to: “Absolute orientation-dependent TiN(001) step energies from two-dimensional equilibrium island shape and coarsening measurements on epitaxial TiN(001) layers” [Surf. Sci. 513 (2002) 468–474]
Absolute orientation-dependent TiN(001) step energies from two-dimensional equilibrium island shape and coarsening measurements on epitaxial TiN(001) layers
Absolute orientation-dependent TiN() step energies from two-dimensional equilibrium island shape and coarsening measurements on epitaxial TiN() layers
Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si0.7Ge0.3 layers on Si(001)
Dopant deactivation in heavily Sb doped Si (001): A high-resolution x-ray diffraction and transmission electron microscopy study
TiN(001) and TiN(111) island coarsening kinetics: in-situ scanning tunneling microscopy studies
Misfit strain induced lattice distortions in heteroepitaxially grown LaxCa1−xMnO3 thin films studied by extended x-ray absorption fine structure and high-resolution x-ray diffraction
Pathway for the Strain-Driven Two-Dimensional to Three-Dimensional Transition during Growth of Ge on Si(001)
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