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Papers authored by N. Tabet

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1998 N. Tabet

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Monte Carlo simulation of the charge collection contrast of spherical defects in semiconductors

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Nouar A. Tabet

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, Mushtaq A. Salim

KRXPS study of the oxidation of Ge(001) surface

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Y. Beggah, D. E. Mekki, N. Tabet

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, R. J. Tarento

Calculation of the electron beam induced current at the interface of a Schottky contact in the presence of Shockley–Read–Hall recombination

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Nouar Tabet

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Monte Carlo Simulation of the Recombination Contrast of Dislocations

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S. Achour, M. T. Belahrache, Abdelhamid Harabi, Nouar Tabet

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Cathodoluminescence Dependence on Beam Generation Conditions and Surface Properties of Materials

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1996 S. Achour, A. Harabi, N. Tabet

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Cathodoluminescence dependence upon irradiation time

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N. Tabet

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, M. Ledra

Monte Carlo simulation of the EBIC grain boundary contrast in semiconductors

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Nouar Tabet

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, Claude J. A. Monty

Injection Level and Temperature Dependence of the Recombination Activity of Grain Boundaries in Germanium

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1994 Y. Beggah, N. Tabet

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, R. J. Tarento

On the effect of the recombination within the depletion zone on the EBIC signal at Schottky contact

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S. Achour, M. T. Benlahrache, A. Harabi, N. Tabet

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Cathodoluminescence dependence on electron beam diameter

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1992 D.-J. Mekki, R.-J. Tarento, N. Tabet

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A Simple Derivation of the Influence of the Depletion Zone on the EBIC Collection Efficiency

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1989 Nouar Tabet

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, René Jean Tarento

Calculation of the electron-beam-induced current (EBIC) at a Schottky contact and comparison with Au/n-Ge diodes

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1988 Nouar Tabet

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, Claude Monty

Characterization of polycrystalline germanium by EBIC

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1982 N. Tabet

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, C. Dolin, C. Monty

Heterodiffusion of Homovalent Elements in Pure NiO and Cr2O3-Doped NiO.,HETERODIFFUSION d'ELEMENTS HOMOVALENTS DANS NiO PUR ET NiO DOPE PAR Cr//2O//3.

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N. Tabet

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, C. Monty

IMPURITY DIFFUSION IN NiO SINGLE CRYSTALS.

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