Robert Schewski
Humboldt-Universitat zu Berlin
15 papers found
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Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting
Download from doi.orgMelt growth and properties of bulk BaSnO3single crystals
UploadSemiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy
Download from www.researchgate.netElectrical compensation by Ga vacancies in Ga2O3 thin films
Download from www.researchgate.netEpitaxial stabilization of pseudomorphic α-Ga2O3on sapphire (0001)
Download from www.researchgate.netOn the bulk β-Ga2O3 single crystals grown by the Czochralski method
Download from www.researchgate.netStructural properties of Si-doped β-Ga2O3 layers grown by MOVPE
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