Hisashi Murakami
0000-0002-4490-1631
2 papers found
Refreshing results…
Ga2O3 fin field-effect transistors with on-axis (100)-plane gate sidewalls fabricated on Ga2O3 (010) substrates
Effect of substrate orientation on homoepitaxial growth of β-Ga2O3 by halide vapor phase epitaxy
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