Lloyd Massengill
0000-0001-8170-6029
14 papers found
Refreshing results…
Radiation-Hardened by Design Sub-Sampling Phase-Locked Loop Techniques in PD-SOI
Ionizing Radiation Effects Spectroscopy for Analysis of Single-Event Transients
Empirical Modeling of FinFET SEU Cross Sections Across Supply Voltage
Exploiting SEU Data Analysis to Extract Fast SET Pulses
A Bias-Dependent Single-Event-Enabled Compact Model for Bulk FinFET Technologies
Ionizing Radiation Effects Spectroscopy for Analysis of Total-Ionizing Dose Degradation in RF Circuits
Effects of Total-Ionizing-Dose Irradiation on Single-Event Response for Flip-Flop Designs at a 14-/16-nm Bulk FinFET Technology Node
Power-Aware SE Analysis of Different FF Designs at the 14-/16-nm Bulk FinFET CMOS Technology Node
Dual-Interlocked Logic for Single-Event Transient Mitigation
Frequency Dependence of Heavy-Ion-Induced Single-Event Responses of Flip-Flops in a 16-nm Bulk FinFET Technology
The Impact of Charge Collection Volume and Parasitic Capacitance on SEUs in SOI- and Bulk-FinFET D Flip-Flops
Time-Domain Modeling of All-Digital PLLs to Single-Event Upset Perturbations
Exploiting Parallelism and Heterogeneity in a Radiation Effects Test Vehicle for Efficient Single-Event Characterization of Nanoscale Circuits
An Empirical Model for Predicting SE Cross Section for Combinational Logic Circuits in Advanced Technologies
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