Jung-Hee Lee
0000-0002-4785-3006
9 papers found
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Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation
Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs
Low-Frequency Noise Characteristics of GaN Nanowire Gate-All-Around Transistors With/Without 2-DEG Channel
A Novel Analysis of ${L}_{\text{gd}}$ Dependent-1/${f}$ Noise in In0.08Al0.92N/GaN
Performance Improvement and Sub-60 mV/Decade Swing in AlGaN/GaN FinFETs by Simultaneous Activation of 2DEG and Sidewall MOS Channels
Bufferless GaN-Based MOSFETs Fabricated on GaN-on-Insulator Wafer
Proton Irradiation Effects on AlGaN/GaN HEMTs With Different Isolation Methods
AlGaN/GaN FinFET with Extremely Broad Transconductance by Side-wall Wet Etch
Growth and Device Performance of AlGaN/GaN Heterostructure with AlSiC Precoverage on Silicon Substrate
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