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On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%–32%
Download from www.researchgate.netTechnology development & design for 22 nm InGaAs/InP-channel MOSFETs
UploadMonolithic 1.55m GaInNAsSb quantum well passively modelocked lasers
Download from doi.orgDevelopment of GaInNAsSb alloys: Growth, band structure, optical properties and applications
Download from www.researchgate.netDilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy
Download from www.researchgate.netMonolithic 1.55-μm GaInNAsSb Quantum Well Mode-Locked Lasers
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