Raul Rengel - Dissemin

Papers authored by Raul Rengel

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2011 Raúl Rengel

, María J. Martin, François Danneville

Microscopic modeling of RF noise in laterally asymmetric channel MOSFETs

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2010 Raúl Rengel

, María Jesús Martin

Electronic Transport in Laterally Asymmetric Channel MOSFET for RF Analog Applications

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2009 Maa Rodriguez, Elena Pascual, Raul Rengel

, Ag Loureiro, Ns Iglesias, Maria J. Martin, Ec Figueroa

Current drive in n-type Schottky Barrier MOSFETs: a Monte Carlo study

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Maa Rodriguez, Raul Rengel

, Maria J. Martin, Ag Loureiro, Ns Iglesias, Francois Danneville, Ec Figueroa

Comparative study of Laterally Asymmetric Channel and conventional MOSFETs

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Elena Pascual, María J. Martín, Raúl Rengel

, Guilhem Larrieu, Emmanuel Dubois

Enhanced carrier injection in Schottky contacts using dopant segregation: a Monte Carlo research

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Elena Pascual Corral, Elena Pascual Corral, Raúl Rengel

, María J. Martín, Massimo Macucci, Giovanni Basso

Intrinsic Noise Sources in a Schottky Barrier MOSFET: a Monte Carlo Analysis

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2008 E. Pascual, R. Rengel

, Nicolas Reckinger, Xiaohui Tang, Vincent Bayot, Emmanuel Dubois, M. J. Martin

A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes: Influence of direct quantum tunnelling and temperature

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M. J. Martín, R. Rengel

, E. Pascual, J. Łusakowski, W. Knap, T. González

Onset of quasi-ballistic transport and mobility degradation in ultra scaled MOSFETs: a Monte Carlo study

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This paper was not found in any repository; the policy of its publisher is unknown or unclear.

2007 M. J. Martín, M. Saraniti, R. Rengel

, U. Ravaioli

Transit Time and Velocity Distribution Functions in Decananometer Gate-Length SOI MOSFETs

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Elena Pascual, Raúl Rengel

, María J. Martín

Microscopic modelling of reverse biased Schottky diodes: influence of non-equilibrium transport phenomena

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J. Łusakowski, M. J. Martin Martinez, R. Rengel

, T. González, R. Tauk, Y. M. Meziani, W. Knap, F. Boeuf, T. Skotnicki

Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors: Experimental and Monte Carlo analysis

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Ral Rengel

, Elena Pascual, Mara J. Martn

Injected Current and Quantum Transmission Coefficient in Low Schottky Barriers: WKB and Airy Approaches

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Elena Pascual, Raul Rengel

, Maria J. Martin

Monte Carlo analysis of tunneling and thermionic transport in a reverse biased Schottky diode

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María J. Martín, M. Tacano, Y. Yamamoto, Raúl Rengel

, Elena Pascual, Tomás González, M. Nakao

RF Noise and Scaling in Nanometer SOI MOSFETs: Influence of Quasiballistic Transport

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Maria J. Martin, Raul Rengel

, Elena Pascual, Tomas Gonzalez

Monte Carlo analysis of carrier transport from diffusive to ballistic regime in nanometer SOI MOSFETs

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2006 Raul Rengel

, M. J. Martin, T. Gonzalez, J. Mateos

, D. Pardo, G. Dambrine, J.-P. Raskin, F. Danneville

A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs

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Raúl Rengel

, María J. Martín, Gilles Dambrine, François Danneville

A Monte Carlo investigation of the RF performance of partially-depleted SOI MOSFETs

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2005 Mj Martin, G. Pailloncy, G. Dambrine, Raúl Rengel

, F. Danneville, T. Gonzalez, J. Mateos, D. Pardo

On the high-frequency noise figures of merit and microscopic channel noise sources in fabricated 90 nm PD SOI MOSFETs

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M. Rosini, D. Pardo, J. Mateos

, G. Dambrine, Raúl Rengel

, F. Danneville, T. Gonzalez, Mj Martin, L. Reggiani, C. Pennetta, Akimov, E. Alfinito

Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation

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2004 Raul Rengel

, Tomas Gonzalez, Maria J. Martin

On the Influence of Space-Quantization Effects on the Rf Noise Behaviour of Dg Mosfets

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Papers authored by Raul Rengel