Jie Zhang
0000-0001-6712-433X
20 papers found
Refreshing results…
High-Performance β-Ga₂O₃ MISIM Solar-Blind Photodetectors With an Interfacial AlN Layer
High-Responsivity Self-Powered Solar-Blind Photodetectors Based on Magnetron-Sputtered CuCrO₂/β-Ga₂O₃ p-n Heterojunction
Effect of Oxygen Precursors on Growth Mechanism in High-Quality β-Ga₂O₃ Epilayers on Sapphire by Molecular Beam Epitaxy and Related Solar-Blind Photodetectors
Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe2 Field-Effect Transistors
Review—Extremely Thin Amorphous Indium Oxide Transistors
Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition
Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In2O3 FETs Toward Monolithic 3-D Integration
Ultrathin InGaO Thin Film Transistors by Atomic Layer Deposition
Fluorine-passivated In2O3 thin film transistors with improved electrical performance via low-temperature CF4/N2O plasma
Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation
Fabrication of Germanium Tin Microstructures Through Inductively Coupled Plasma Dry Etching
One-volt TiO2 Thin Film Transistors with Low-Temperature Process
InAlN/GaN HEMT on Si With fmax = 270 GHz
Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate
Improving the electrical performance of monolayer top-gated MoS2 transistors by post bis(trifluoromethane) sulfonamide treatment
Enhancement-/Depletion-Mode TiO2 Thin-Film Transistors via O2/N2 Preannealing
Sub-60 mV/decade Switching via Hot Electron Transfer in Nanoscale GaN HEMTs
Performance enhancement of monolayer MoS2 transistors by atomic layer deposition of high-k dielectric assisted by Al2O3 seed layer
Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors
Ultrathin-Body TiO2 Thin Film Transistors With Record On-Current Density, ON/OFF Current Ratio, and Subthreshold Swing via O2 Annealing
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