Thierry Chassagne

All papers authored by Thierry Chassagne

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2016 Rami Khazaka

, Marius Grundmann

, Marc Portail, Philippe Vennéguès, Marcin Zielinski, Thierry Chassagne

, Daniel Alquier, Jean-François Michaud

Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)

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2014 Jean François Michaud

, Marc Portail, Thierry Chassagne

, Marcin Zielinski

, Daniel Alquier

3C-SiC: New Interest for MEMS Devices

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M. Portail, S. Vézian, M. Teisseire, A. Michon, T. Chassagne

, M. Zielinski

Structural trends in Si dots formation on SiC surfaces using CVD environment

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P. Fiorenza, Marilena Vivona, L. K. Swanson, Filippo Giannazzo, C. Bongiorno, S. Di Franco, S. Lorenti, A. Frazzetto, Thierry Chassagne

, Fabrizio Roccaforte

Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N₂O and POCl₃

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Roxana Arvinte, Marcin Zielinski

, Thierry Chassagne

, Marc Portail, Adrien Michon, Pawel Kwasnicki, Sandrine Juillaguet, Hervé Peyre

Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers

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R. Boubekri, E. Cambril, L. Couraud, L. Bernardi, A. Madouri, M. Portail, T. Chassagne

, C. Moisson, M. Zielinski, S. Jiao, J.-F. Michaud

, D. Alquier, J. Bouloc, L. Nony, F. Bocquet and 3 other authors

Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy

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Yvon Cordier

, Eric Frayssinet, Marc Portail, Marcin Zielinski, Thierry Chassagne

, Maxim Korytov, Aimeric Courville, Sébastien Roy, Maud Nemoz, Magdalena Chmielowska, Philippe Vennéguès, H. P. David Schenk, Mark Kennard, Alexis Bavard, Daniel Rondi

Influence of 3C–SiC/Si (111) template properties on the strain relaxation in thick GaN films

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A. Michon, Antoine Tiberj, S. Vézian, E. Roudon, D. Lefebvre, M. Portail, M. Zielinski, T. Chassagne

, Jean Camassel, Y. Cordier

Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

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2013 J. F. Michaud

, M. Portail, T. Chassagne

, M. Zielinski, D. Alquier

Original 3C-SiC micro-structure on a 3C-SiC pseudo-substrate

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Adrien Michon, Ludovic Largeau, Antoine Tiberj, Jean Roch Huntzinger, Olivia Mauguin, Stephane Vezian, Denis Lefebvre, Fabien Cheynis, Frédéric Leroy, Pierre Müller, Thierry Chassagne

, Marcin Zielinski

, Marc Portail

X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on 6H-SiC(0001) Using Propane-Hydrogen-Argon CVD

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A. Michon, S. Vézian, E. Roudon, D. Lefebvre, M. Zielinski, T. Chassagne

, M. Portail

Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

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2012 Marc Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, E. Roudon, M. Zielinski, T. Chassagne

, Antoine Tiberj, Jean Camassel, Y. Cordier

Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC

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Adrien Michon, Elodie Roudon, Marc Portail, Benoit Jouault, Sylvie Contreras, Sébastien Chenot, Yvon Cordier

, Denis Lefebvre, Stephane Vézian, Marcin Zielinski

, Thierry Chassagne

, Jean Camassel

Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)

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Marc Portail, Adrien Michon, Stephane Vézian, Denis Lefebvre, Sébastien Chenot, Abdelkarim Ouerghi, Marcin Zielinski, Thierry Chassagne

, Yvon Cordier

CVD Growth of Graphene on 2’’ 3C-SiC/Si Templates: Influence of Substrate Orientation and Wafer Homogeneity

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S. Jiao, J. F. Michaud

, M. Portail, A. Madouri, T. Chassagne

, M. Zielinski, D. Alquier

A new approach for AFM cantilever elaboration with 3C-SiC

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Marcin Zielinski, Jean-François Michaud

, Sai Jiao, Thierry Chassagne

, Anne-Elisabeth Bazin, Adrien Michon, Marc Portail, Daniel Alquier

Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon

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Xi Song, Jerome Biscarrat, Anne Elisabeth Bazin, Jean François Michaud

, Frederic Cayrel, Marcin Zielinski

, Thierry Chassagne

, Marc Portail, Emmanuel Collard, Daniel Alquier

Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si

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Adrien Michon, Elodie Roudon, Marc Portail, Denis Lefebvre, Stephane Vezian, Yvon Cordier

, Antoine Tiberj, Thierry Chassagne

, Marcin Zielinski

Graphene/SiC Interface Control Using Propane-Hydrogen CVD on 6H-SiC(0001) and 3C-SiC(111)/Si(111)

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Sai Jiao, Marc Portail, Jean François Michaud

, Marcin Zielinski

, Thierry Chassagne

, Daniel Alquier

Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition

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Sai Jiao, Marcin Zielinski

, Jean-Francois Michaud

, Thierry Chassagne

, Marc Portail, Daniel Alquier

Detailed Experimental Study of Mean and Gradient Stresses in Thin 3C-SiC Films Performed Using Micromachined Cantilevers

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All papers authored by Thierry Chassagne