Zaffar Haider Zaidi
0000-0002-2088-6166
5 papers found
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Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors
Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers
Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs
Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors
Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors
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