Refreshing results…
Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers
Download from doi.orgTemperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers
Download from doi.orgAtomic disordering processes in crystalline GeTe induced by ion irradiation
Download from iopscience.iop.orgSiCILIA—Silicon Carbide Detectors for Intense Luminosity Investigations and Applications
Download from doi.orgStacking Faults Defects on 3C-SiC Homo-Epitaxial Films
Download from doi.orgDouble Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET
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