Shoji Ikeda
0000-0002-3925-4089
Tohoku University
222 papers found
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12.1 An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz
Critical Role of W Insertion Layer Sputtering Condition for Reference Layer on Magnetic and Transport Properties of Perpendicular-Anisotropy Magnetic Tunnel Junction
14ns write speed 128Mb density Embedded STT-MRAM with endurance>1010 and 10yrs retention@85°C using novel low damage MTJ integration process
STEM tomography study on structural features induced by MTJ processing
1T-1MTJ Type Embedded STT-MRAM with Advanced Low-Damage and Short-Failure-Free RIE Technology down to 32 nmφ MTJ Patterning
Novel Method of Evaluating Accurate Thermal Stability for MTJs Using Thermal Disturbance and its Demonstration for Single-/Double-Interface p-MTJ
Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer
Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20 nm
Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiation
Fast neutron tolerance of the perpendicular-anisotropy CoFeB–MgO magnetic tunnel junctions with junction diameters between 46 and 64 nm
Annealing temperature dependence of magnetic properties of CoFeB/MgO stacks on different buffer layers
Impact of sputtering condition for tungsten on magnetic and transport properties of magnetic tunneling junction with CoFeB/W/CoFeB free layer
A spin transfer torque magnetoresistance random access memory-based high-density and ultralow-power associative memory for fully data-adaptive nearest neighbor search with current-mode similarity evaluation and time-domain minimum searching
Design of a variation-resilient single-ended non-volatile six-input lookup table circuit with a redundant-magnetic tunnel junction-based active load for smart Internet-of-things applications
Origin of variation of shift field via annealing at 400°C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer
Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices
Beyond MRAM: Nonvolatile Logic-in-Memory VLSI
Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing
Free- and reference-layer magnetization modes versus in-plane magnetic field in a magnetic tunnel junction with perpendicular magnetic easy axis
An Overview of Nonvolatile Emerging Memories— Spintronics for Working Memories
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