Chen Sun
0000-0001-5695-7803
5 papers found
Refreshing results…
BEOL-Compatible MFMIS Ferroelectric/Anti-Ferroelectric FETs—Part I: Experimental Results With Boosted Memory Window
Multibit Content Addressable Memory Design and Optimization Based on 3-D nand-Compatible IGZO Flash
Grain Size Reduction of Ferroelectric HZO Enabled by Solid Phase Epitaxy (SPE): Working Principle, Experimental Demonstration, and Theoretical Understanding
Low-Power and Scalable BEOL-Compatible IGZO TFT eDRAM-Based Charge-Domain Computing
Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory
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