Jonghwa Eom
0000-0003-4031-4744
15 papers found
Refreshing results…
Broadening spectral responses and achieving environmental stability in SnS2/Ag-NPs/HfO2 flexible phototransistors
Bipolar Photoresponse of a Graphene Field-Effect Transistor Induced by Photochemical Reactions
Ultrafast and Highly Stable Photodetectors Based on p-GeSe/n-ReSe2 Heterostructures
WSe2 Homojunction p–n Diode Formed by Photoinduced Activation of Mid-Gap Defect States in Boron Nitride
WS2/GeSe/WS2 Bipolar Transistor-Based Chemical Sensor with Fast Response and Recovery Times
High Performance Complementary WS2 Devices with Hybrid Gr/Ni Contacts
High mobility ReSe2 field effect transistors: Schottky-barrier-height-dependent photoresponsivity and broadband light detection with Co decoration
Van der Waals 2D layered-material bipolar transistor
MoTe2 van der Waals homojunction p–n diode with low resistance metal contacts
Thickness-dependent resistive switching in black phosphorus CBRAM
Layer dependent magnetoresistance of vertical MoS2 magnetic tunnel junctions
Van der Waals heterojunction diode composed of WS2flake placed on p-type Si substrate
Gate Tunable Transport in Graphene/MoS2/(Cr/Au) Vertical Field-Effect Transistors
A facile route to a high-quality graphene/MoS2vertical field-effect transistor with gate-modulated photocurrent response
Enhanced photoresponse of ZnO quantum dot-decorated MoS2thin films
Missing publications? Search for publications with a matching author name.