Jonghwa Eom
0000-0003-4031-4744
15 papers found
Refreshing results…
Broadening spectral responses and achieving environmental stability in SnS2/Ag-NPs/HfO2 flexible phototransistors
Bipolar Photoresponse of a Graphene Field-Effect Transistor Induced by Photochemical Reactions
Ultrafast and Highly Stable Photodetectors Based on p-GeSe/n-ReSe2 Heterostructures
WSe2 Homojunction p–n Diode Formed by Photoinduced Activation of Mid-Gap Defect States in Boron Nitride
WS2/GeSe/WS2 Bipolar Transistor-Based Chemical Sensor with Fast Response and Recovery Times
High Performance Complementary WS2 Devices with Hybrid Gr/Ni Contacts
High mobility ReSe2 field effect transistors: Schottky-barrier-height-dependent photoresponsivity and broadband light detection with Co decoration
Van der Waals 2D layered-material bipolar transistor
Thickness-dependent resistive switching in black phosphorus CBRAM
MoTe2 van der Waals homojunction p–n diode with low resistance metal contacts
Layer dependent magnetoresistance of vertical MoS2 magnetic tunnel junctions
Van der Waals heterojunction diode composed of WS2flake placed on p-type Si substrate
Gate Tunable Transport in Graphene/MoS2/(Cr/Au) Vertical Field-Effect Transistors
A facile route to a high-quality graphene/MoS2vertical field-effect transistor with gate-modulated photocurrent response
Enhanced photoresponse of ZnO quantum dot-decorated MoS2thin films
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