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Papers authored by Toru Ujihara

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2006 Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara

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, Kazuo Nakajima

Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution

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T. Ujihara

ORCID

, Y. Yoshida, W. S. Lee, Y. Takeda

Size uniformity of InAs dots on mesa-structure templates on (001) InP substrates grown by droplet metal-organic vapor phase epitaxy method

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T. Ujihara

ORCID

, T. Ichitsubo, N. Usami, K. Nakajima, Y. Takeda, Ieee

Evaluation of Strain Field Around SIC Particle in Poly-Crystalline Silicon

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Kazuhiko Kusunoki, Kazuhito Kamei, Nobuhiro Okada, Nobuyoshi Yashiro, Akihiro Yauchi, Toru Ujihara

ORCID

, Kazuo Nakajima

Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique

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2005 Toru Ujihara

ORCID

, Shinji Munetoh, Kazuhiko Kusunoki, Kazuhito Kamei, Noritaka Usami, Kozo Fujiwara, Gen Sazaki, Kazuo Nakajima

Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: a Raman spectroscopic study

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Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara

ORCID

, K. Nakajima

A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal

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Kozo Fujiwara, Wugen Pan, Noritaka Usami, Kohei Sawada, Akiko Nomura, Toru Ujihara

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, Toetsu Shishido, Kazuo Nakajima

Structural properties of directionally grown polycrystalline SiGe for solar cells

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Noritaka Usami, Kentaro Kutsukake, Wugen Pan, Kozo Fujiwara, Toru Ujihara

ORCID

, Baoping Zhang, Takashi Yokoyama, Kazuo Nakajima

Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained-Si layer

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Kazuhiko Kusunoki, Kazuhito Kamei, Y. Ueda, S. Naga, Y. Ito, Mitsuhiro Hasebe, Toru Ujihara

ORCID

, Kazuo Nakajima

Crystalline Quality Evaluation of 6H-SiC Bulk Crystals Grown from Si-Ti-C Ternary Solution

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Gen Sazaki, Takuho Fujino, Noritaka Usami, Toru Ujihara

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, Kozo Fujiwara, Kazuo Nakajima

Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(1 1 1) substrate

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Yusuke Satoh, Noritaka Usami, Wugen Pan, Kozo Fujiwara, Kazuo Nakajima, Toru Ujihara

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Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent

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Kazuo Nakajima, Yukinaga Azuma, Noritaka Usami, Gen Sazaki, Toru Ujihara

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, Kozo Fujiwara, Toetsu Shishido, Yoshito Nishijima, Toshihiro Kusunoki

Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams

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2004 T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, M. Oku and 7 other authors

Molten metal flux growth and properties of CrSi2

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Kentaro Kutsukake, Noritaka Usami, Toru Ujihara

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, Kozo Fujiwara, Gen Sazaki, Kazuo Nakajima

On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates

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Yukinaga Azuma, Yoshito Nishijima, Kazuo Nakajima, Noritaka Usami, Kozo Fujiwara, Toru Ujihara

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Successful Growth of In_xGa_1-xAs (x>0.18) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation

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Toru Ujihara

ORCID

, Eiji Kanda, Kazuo Obara, Kozo Fujiwara, Noritaka Usami, Gen Sazaki, Arnold Alguno, Toetsu Shishido, Kazuo Nakajima

Effects of growth temperature on the surface morphology of silicon thin films on (111) silicon monocrystalline substrate by liquid phase epitaxy

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Kozo Fujiwara, Yoshikazu Obinata, Toru Ujihara

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, Noritaka Usami, Gen Sazaki, Kazuo Nakajima

Grain growth behaviors of polycrystalline silicon during melt growth processes

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Arnold Alguno, Noritaka Usami, Toru Ujihara

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, Kozo Fujiwara, Gen Sazaki, Kazuo Nakajima, Kentaro Sawano, Yasuhiro Shiraki

Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer

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Kentaro Kutsukake, Noritaka Usami, Kozo Fujiwara, Toru Ujihara

ORCID

, Gen Sazaki, Kazuo Nakajima, Baoping Zhang, Yusaburo Segawa

Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate

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Kozo Fujiwara, Yoshikazu Obinata, Toru Ujihara

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, Noritaka Usami, Gen Sazaki, Kazuo Nakajima

In-situ observations of melt growth behavior of polycrystalline silicon

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