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Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
UploadEpitaxy of group III-nitride materials using different nucleation schemes
UploadTuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
UploadThermal conductivity of AlxGa1−xN (0≤x≤1) epitaxial layers
UploadEpitaxial strategies for defect reduction in GaN for vertical power devices
Download from liu.diva-portal.orgPhonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness
UploadSol–Gel-Deposited Ti-Doped ZnO: Toward Cell Fouling Transparent Conductive Oxides
Download from pubs.acs.orgCompared Biocompatibility of ZnTiO3, ZnO and TiO2 Sol-Gel Films with Human Mesenchymal Stem Cells
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