Petr Lazarenko - Dissemin

Papers authored by Petr Lazarenko

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2016 M. S. Mikhailova, S. Y. Nemtseva, V. B. Glukhenkaya, P. I. Lazarenko

, A. A. Sherchenkov, S. A. Kozyukhin

, S. P. Timoshenkov

Chemical surface treatment of Ge2Sb2Te5 thin films for phase change memory application

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P. I. Lazarenko

, A. A. Sherchenkov, S. A. Kozyukhin

, D. Y. Terekhov, A. O. Yakubov, A. V. Babich, A. S. Shuliatyev, I. V. Sagunova, E. N. Redichev

Influence of the Composition on the Thermoelectric and Electro-physical Properties of Ge-Sb-Te Thin Films for Phase Change Memory Application

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Alexey Babich, Alexey Sherchenkov, Sergey Kozyukhin

, Petr Lazarenko

, Olga Boytsova, Alexey Shuliatyev

Effect of doping on the crystallization kinetics of phase change memory materials on the basis of Ge–Sb–Te system

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Alexey Sherchenkov, Sergey Kozyukhin

, Petr Lazarenko

, Alexey Babich

, Sergey Timoshenkov, Dmitry Gromov, Alexey Yakubov, Dmitry Terekhov

Influence of Ti Doping on the Properties of Ge-Sb-Te Thin Films for Phase Change Memory

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P. I. Lazarenko

, A. A. Sherchenkov, S. A. Kozyukhin

, A. V. Babich, H. P. Nguen, S. P. Timoshenkov, D. G. Gromov, A. O. Yakubov, D. Y. Terekhov

Influence of indium doping on the electrical properties of Ge₂Sb₂Te₅thin films for nonvolatile phase change memory devices

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A. Babich, A. Sherchenkov, S. Kozyukhin

, P. Lazarenko

, S. Timoshenkov, O. Boytsova

Investigation of the crystallization kinetics in Ge-Sb-Te-Bi and Ge-Sb-Te-In phase-change memory materials

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P. Lazarenko

, A. Sherchenkov, S. Kozyukhin

, A. Babich, S. Timoshenkov, A. Shuliatyev, V. Kudoyarova

Electrical properties and transport mechanisms in Ge-Sb-Te thin films

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P. I. Lazarenko

, A. A. Sherchenkov, S. A. Kozyukhin

, A. V. Babich, S. P. Timoshenkov, D. G. Gromov, A. S. Shuliatyev, E. N. Redichev

Electrical properties of the Ge2Sb2Te5 thin films for phase change memory application

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2015 A. O. Yakubov, D. Y. Terekhov, A. A. Sherchenkov, S. A. Kozyuhhin, P. I. Lazarenko

, A. V. Babich, S. P. Timoshenkov, D. G. Gromov, A. S. Shuliatyev

Electrophysical properties of phase change memory materials on the pseudo-binary line GeTe-Sb₂Te₃

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A. Sherchenkov, P. Lazarenko

, A. Babich, N. Korobova, S. Timoshenkov, A. Yakubov, D. Terekhov, A. Shuliatyev, S. Kozyukhin

, O. Boytsova

Electrical properties and transport mechanisms in Ge-Sb-Te thin films for nanoelectronics

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2014 Petr I. Lazarenko

, Alexey A. Sherchenkov, Sergey S. Kozyukhin

, Maxim Y. Shtern, Sergey P. Timoshenkov, Dmitry G. Gromov, Evgeniy N. Redichev

Investigation of transport mechanisms in Bi doped Ge₂Sb₂Te₅thin films for phase change memory application

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Sergey Kozyukhin

, Alexey Sherchenkov, Alexey Babich, Petr Lazarenko

, Huy Phuc Nguyen, Oleg Prikhodko

Peculiarities of Bi doping of Ge–Sb–Te thin films for PCM devices

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2013 A. Sherchenkov, S. Kozyukhin

, A. Babich, P. Lazarenko

Thermal properties of phase change material Ge2Sb2Te5 doped with Bi

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2011 P. Lazarenko

, H. P. Nguyen, S. Kozyukhin

, A. Sherchenkov

Influence of Bi doping on electrical and optical properties of phase change material Ge 2Sb 2Te 5

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Papers authored by Petr Lazarenko