Yen-Hsun Glen Lin - Dissemin

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All papers authored by Yen-Hsun Glen Lin

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2024 J.-F. Wong

ORCID

, K.-H. M. Chen

ORCID

, J.-M. Chia, Z.-P. Huang, S.-X. Wang, P.-T. Chen, L. B. Young, Y.-H. G. Lin

ORCID

, S.-F. Lee, C.-Y. Mou

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, M. Hong

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, J. Kwo

ORCID

Electrically sign-reversible topological Hall effect in a top-gated topological insulator (Bi,Sb)2Te3 grown on europium iron garnet

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Y. H. G. Lin

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ORCID

ORCID

ORCID

, J. Liu

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ORCID

, J. Kwo

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, M. Hong

ORCID

Effective passivation of p- and n-type In0.53Ga0.47As in achieving low leakage current, low interfacial traps, and low border traps

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2023 J. Liu

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ORCID

, Y. H. G. Lin

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ORCID

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, J. Kwo

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, M. Hong

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GaAs MOSFETs with in situ Y₂O₃ dielectric: attainment of nearly thermally limited subthreshold slope and enhanced drain current via accumulation

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This paper was not found in any repository, but could be made available legally by the author.

Wan-Sin Chen

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, Keng-Yung Lin

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, Yen-Hsun Glen Lin

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, Hsien-Wen Wan, Lawrence Boyu Young

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, Chiu-Ping Cheng

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, Tun-Wen Pi, Jueinai Kwo, Minghwei Hong

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y₂O₃/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation

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2022 Wen Hsin Chang

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, Hsien-Wen Wan, Yi-Ting Cheng, Yen-Hsun G. Lin

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, Toshifumi Irisawa, Hiroyuki Ishii, Jueinai Kwo, Minghwei Hong, Tatsuro Maeda

Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure

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L. B. Young

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, J. Liu

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, Y. H. G. Lin

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ORCID

, L. S. Chiang, J. Kwo

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, M. Hong

ORCID

Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al₂O₃/Y₂O₃ as a gate dielectric

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Wei-Jhih Zou

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, Meng-Xin Guo, Jyun-Fong Wong, Zih-Ping Huang, Jui-Min Chia, Wei-Nien Chen, Sheng-Xin Wang, Keng-Yung Lin, Lawrence Boyu Young

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, Yen-Hsun Glen Lin

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, Mohammad Yahyavi, Chien-Ting Wu, Horng-Tay Jeng

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, Shang-Fan Lee

ORCID

, Tay-Rong Chang

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and 2 other authors

Enormous Berry-Curvature-Based Anomalous Hall Effect in Topological Insulator (Bi,Sb)2Te3 on Ferrimagnetic Europium Iron Garnet beyond 400 K

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2021 Y. H. G. Lin

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ORCID

ORCID

, J. Liu

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, Y. T. Cheng, K. Y. Lin

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, Y. J. Hong, C. T. Wu, J. Kwo

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, M. Hong

ORCID

In situ Y₂O₃ on p-In_0.53Ga_0.47As—Attainment of low interfacial trap density and thermal stability at high temperatures

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2020 Minghwei Hong, Chao-Kai Cheng

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, Yen-Hsun Lin

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, Lawrence Boyu Young, Ren-Fong Cai

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, Chia-Hung Hsu, Chien-Ting Wu, Jueinai Kwo

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite

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2019 K. Y. Lin, H. W. Wan, K. H. M. Chen, Y. T. Fanchiang, W. S. Chen, Y. H. Lin

ORCID

, Y. T. Cheng, C. C. Chen, H. Y. Lin, L. B. Young, C. P. Cheng, T. W. Pi, J. Kwo, M. Hong

Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum

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Lawrence Boyu Young

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, Chao-Kai Cheng, Keng-Yung Lin, Yen-Hsun Lin

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, Hsien-Wen Wan, Ren-Fong Cai, Shen-Chuan Lo, Mei-Yi Li, Chia-Hung Hsu, Jueinai Kwo, Minghwei Hong

Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition

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2018 M. Hong, Y. H. Lin

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, H. W. Wan, W. S. Chen, Y. T. Cheng, C. P. Cheng, T. W. Pi, J. Kwo

Interfacial perfection for pushing InaAs and Ge MOS device limits (invited)

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2017 Y. H. Lin

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, K. Y. Lin, W. J. Hsueh, L. B. Young, T. W. Chang, J. I. Chyi, T. W. Pi, J. Kwo, M. Hong

Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition

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M. Hong

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, H. W. Wan, K. Y. Lin, Y. C. Chang, M. H. Chen, Y. H. Lin

ORCID

, T. D. Lin, T. W. Pi, J. Kwo

ORCID

Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition

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Yi-Ting Cheng, Yen-Hsun Lin

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, Wan-Sin Chen, Keng-Yung Lin, Hsien-Wen Wan, Chiu-Ping Cheng, Hung-Hsiang Cheng, Jueinai Kwo, Minghwei Hong, Tun-Wen Pi

Surface electronic structure of epi germanium (001)-2 × 1

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T. W. Chang, K. Y. Lin, Y. H. Lin

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, L. B. Young, J. Kwo, M. Hong

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Analysis of border and interfacial traps in ALD-Y2O3 and -Al2O3 on GaAs via electrical responses - A comparative study

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C. K. Cheng, L. B. Young, K. Y. Lin, Y. H. Lin

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, H. W. Wan, G. J. Lu, M. T. Chang, R. F. Cai, S. C. Lo, M. Y. Li, C. H. Hsu, J. Kwo, M. Hong

Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A and (001) using atomic layer deposition

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K. Y. Lin, L. B. Young, C. K. Cheng, K. H. Chen, Y. H. Lin

ORCID

, H. W. Wan, R. F. Cai, S. C. Lo, M. Y. Li, J. Kwo, M. Hong

ORCID

Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs(001)

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H. W. Wan, Y. H. Lin

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, K. Y. Lin, T. W. Chang, R. F. Cai, J. Kwo, M. Hong

ORCID

Ultra-high thermal stability and extremely low D on HfO2/p-GaAs(001) interface

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