Charles Cornet
Institut FOTON - INSA Rennes
344 papers found
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Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster
Download from www.researchgate.netRaman investigation of GaP-Si interfaces grown by molecular beam epitaxy
Download from www.researchgate.netNitrogen–phosphorus competition in the molecular beam epitaxy of GaPN
Download from www.researchgate.netSynchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers
Download from www.researchgate.netgamma-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs)
UploadUHVCVD-MBE growth for tandem solar cells
UploadIntégration optique par croissance directe de nanostructures III-V sur silicium
UploadUHVCVD-MBE growth cluster for III-N-V/Si solar cells
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