Heinz Christoph Neitzert

Papers authored by Heinz Christoph Neitzert

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2004 Salvatore Bellone, Heinz-Christoph Neitzert

, Gian Domenico Licciardo

Modelling and characterisation of the OCVD response at an arbitrary time and injection level

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Heinz-Christoph Neitzert

, Patrizio Spinillo, Salvatore Bellone, Gian-Domenico Licciardi, Mario Tucci, Francesco Roca, Lucio Gialanella, Mario Romano

Investigation of the damage as induced by 1.7MeV protons in an amorphous/crystalline silicon heterojunction solar cell

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F. De Santis, H. C. Neitzert

In-situ characterization of polymer crystallization using a low-cost light emitting diode array as optical receiver with photogain

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Domenico Acierno, Eugenio Amendola, Salvatore Bellone, Simona Concilio, Luigi Ferrara, Pio Iannelli, Heinz-Christoph Neitzert

, Alfredo Rubino, Fulvia Villani

Synthesis and luminescent properties of a new class of nematic oxadiazole containing poly-ethers for PLED

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M. Kunst, H.-C. Neitzert

, A. Sanders

Characterization of InP and GaAs films by contactless transient photoconductivity measurements

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2003 Domenico Acierno, Eugenio Amendola, Salvatore Bellone, Simona Concilio, Pio Iannelli, Heinrich-Christoph Neitzert

, ‖ and Alfredo Rubino, Fulvia Villani

Synthesis and Characterization of a New Class of Nematic Photoluminescent Oxadiazole-Containing Polyethers

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H. C. Neitzert

, B. Gobbi

Degradation of proton implanted VCSEL's due to electrostatic discharge pulses

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2002 H.-C. Neitzert

, A. Piccirillo

Parameter extraction during thermal cycling and optical backreflection measurements of bidirectional optoelectronic modules

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2001 H. C. Neitzert

A Wannier-Stark waveguide electroabsorption modulator as a low-power switch and its application as NAND, NOR or EXOR all-optical logic gates

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H.-C. Neitzert

, A. Piccirillo, B. Gobbi

Sensitivity of proton implanted VCSELs to electrostatic discharge pulses

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2000 H. C. Neitzert

, R. Fang, M. Kunst, N. Layadi

CH 4 /H 2 reactive ion etching induced damage of InP

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H. C. Neitzert

Optical gain at low bias voltages in electrostatic-discharge-damaged silicon p-i-n photodiodes

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H. C. Neitzert

ESD-induced degradation of vertical-cavity surface-emitting lasers

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1999 H. C. Neitzert

, A. Piccirillo

Sensitivity of multimode bidirectional optoelectronic modules to electrostatic discharges

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1997 Heinz-Christoph Neitzert

, Valeria Cappa, Rosella Crovato

Influence Of The Device Geometry And Inhomogeneity On The Electrostatic Discharge Sensitivity Of InGaAs/InP Avalanche Photodetectors

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1996 P. Montangero, G. A. Azzini, H. C. Neitzert

, G. Ricci, L. Serra

Reliability of InGaAs/InP based separate absorption grading multiplication avalanche photodiodes

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H. C. Neitzert

, Cappa, S. Massetti

Electroluminescence imaging for defect characterization in InP based optoelectronic devices

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1995 H. C. Neitzert

, W. Hirsch

In-situ measurements of changes of the excess charge carrier decay rate at the crystalline silicon surface during low temperature annealing and cooling

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H. C. Neitzert

, C. Cacciatore, D. Campi, C. Rigo, C. Coriasso, A. Stano

InGaAs-InP superlattice electroabsorption waveguide modulator

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H. C. Neitzert

, W. Hirsch, M. Kunst, M. E. A. Nell

In situ thickness control during plasma deposition of hydrogenated amorphous silicon films by time-resolved microwave conductivity measurements

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Papers authored by Heinz Christoph Neitzert