Wen Hsin Chang
0000-0002-8501-6276
National Institute of Advanced Industrial Science and Technology
46 papers found
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Structural Characteristics of Nanometer Thick Gd2O3 Films Grown on GaN (0001)
Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO2 as a gate dielectric
Nanometer‐Thick Single‐Crystal Hexagonal Gd2O3 on GaN for Advanced Complementary Metal‐Oxide‐Semiconductor Technology
GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth
High κ dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties
Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric
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