Wen Hsin Chang
National Institute of Advanced Industrial Science and Technology
46 papers found
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Temperature rise effects on static characteristics of complementary FETs with Si and Ge nanosheets
Download from iopscience.iop.orgLow thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure
Download from iopscience.iop.orgGrowth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer p–n diode by substitutional doping
Download from doi.org(Invited) Layer Transfer Technology for Stacked Multi-Channel Semiconductor-on-Insulator Platform
Download from iopscience.iop.orgSpectral Responsivity Characteristics of Front‐Side Illumination InGaAs PhotoFETs on Si
Download from onlinelibrary.wiley.comCVD grown bilayer WSe2/MoSe2 heterostructures for high performance tunnel transistors
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