Lorenzo Pace
0000-0002-7618-6919
University of Rome "Tor Vergata"
14 papers found
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32–36-GHz Single-Chip Front-End MMIC Featuring 35-dBm Output Power and 3.2-dB Noise Figure With 60- and 100-nm GaN/Si HEMTs
Low-Noise Amplifiers in Gallium Nitride for Robust and Highly Linear Ka-Band SATCOM
DC Power-Optimized Ka-Band GaN-on-Si Low-Noise Amplifier With 1.5 dB Noise Figure
Ultralow-Power Digital Control and Signal Conditioning in GaAs MMIC Core Chip for X-Band AESA Systems
Source/Load-Pull Noise Measurements at Ka Band
Novel Design Charts for Optimum Source Degeneration Tradeoff in Conjugately Matched Multistage Low-Noise Amplifiers
Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths
Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models
Nondestructive, Self-Contained Extraction Method of Parasitic Resistances in HEMT Devices
Development of a V-Band MMIC chip-set for in-orbit Inter-Satellite Links
Development of a MMIC chip-set for W-band space-borne communications
Comparative noise investigation of high-performance GaAs and GaN millimeter-wave monolithic technologies
A Ka-Band Low-Noise Amplifier for Space Applications in a 100 nm GaN on Si technology
A Times-4 Frequency Multiplier from K- to W-band
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