Marcello Cioni
0000-0001-8302-6641
Università degli Studi di Modena e Reggio Emilia Dipartimento di Ingegneria Enzo Ferrari
6 papers found
Refreshing results…
Gate-Bias Induced RON Instability in p-GaN Power HEMTs
Experimental and numerical investigation of Poole–Frenkel effect on dynamic R ON transients in C-doped p-GaN HEMTs
Partial Recovery of Dynamic R ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs
Mechanisms Underlying the Bidirectional V T Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs
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