Daniel Gall
0000-0002-5762-9307
112 papers found
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Role of fast sputtered particles during sputter deposition: Growth of epitaxial Ge0.99C0.01/Ge(001)
Epitaxial ScN (001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of As-deposited Layers
Epitaxial VN (001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of As-deposited Layers
Epitaxial TiN (001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of As-deposited Layers
Epitaxial ScN (001) grown and analyzed in situ by XPS and UPS. II. Analysis of Ar+ sputter etched layers
A Comparison of Auger Electron Spectra from Stoichiometric Epitaxial TiN (001) After (1) UHV Cleaving and (2) Ar+ Sputter Etching
Epitaxial TiN (001) grown and analyzed in situ by XPS and UPS. II. Analysis of Ar+ sputter etched layers
Growth and physical properties of epitaxial metastable cubic TaN(001)
Microstructural evolution and Poisson ratio of epitaxial ScN grown on TiN(001)/MgO(001) by ultrahigh vacuum reactive magnetron sputter deposition
Growth of poly- and single-crystal ScN on MgO (001): Role of low-energy N-2(+) irradiation in determining texture, microstructure evolution, and mechanical properties
Microstructure and electronic properties of the refractory semiconductor ScN grown on Mg0(001) by ultra-high-vacuum reactive magnetron sputter deposition
Pulsed plasma deposition of chromium oxide chromium-cermet coatings
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