Konstantin Moiseev
0000-0002-6306-0129
Fiziko-tekhnicheskij institut imeni A F Ioffe RAN
118 papers found
Refreshing results…
Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system
Vertical transport in a GaInAsSb∕p-InAs broken-gap type II heterojunction
Interface roughness scattering in type II band offset GaInAsSb/InAs single heterostructures
Interface roughness scattering in type II broken-gap GaInAsSb/InAs single heterostructures
Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb
Interface related radiative recombination on a type-II broken-gap single GaInAsSb/InAs heterojunction
Room-temperature electroluminescence of AlSb∕InAsSb single quantum wells grown by metal organic vapor phase epitaxy
Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface
Energy spectrum and quantum magnetotransport in type-II heterojunctions
Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions
Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0.89 lattice matched to InAs
Mid-infrared lasing from self-consistent quantum wells at a type II single broken-gap heterointerface
Electroluminescence in a semimetal channel at a single type II broken-gap heterointerface
Interaction of charge carriers with the localized magnetic moments of manganese atoms in p-GaInAsSb/p-InAs:Mn heterostructures
Special features of spontaneous and coherent emission of IR lasers based on a single type-II broken-gap heterojunction
Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy
A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy
Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction
<title>Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity</title>
<title>Interface luminescence and lasing at a type II single broken-gap heterojunction</title>
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