Ivan Maximov
0000-0003-1944-4878
Lund University
99 papers found
Refreshing results…
Bandgap modification in GaInAs/InP quantum well structures using switched ion channelling lithography
Annealing behaviour of foreign atom incorporated Co-silicides formed by MEVVA implantation into SiO2/Si and Si3N4/Si structures
Nonlinear operation of GaInAs/InP-based three-terminal ballistic junctions
InGaAs/InP based ballistic rectifiers
Scanning probe microscopy characterisation of masked low energy implanted nanometer structures
Fabrication and transport characterization of InGaAs/InP planar quantum dots
Conductance oscillations induced by longitudinal resonant states in heteroepitaxially defined Ga0.25In0.75As/InP electron waveguides
Nanoimprint lithography at the 6 in. wafer scale
High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si
High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part II: sputtering yield transients, the approach to high-fluence equilibrium
High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si. Part II: Sputtering yield transients, the approach to high-dose equilibrium
High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si. Part III: Heavy-dose Co bombardment induce surafce topography development
High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si. Part I: formation of thin silicide surface films
Large scale nanolithography using nanoimprint lithography
Effects of annealing on electron cyclotron resonance plasma-induced damage in GaAs/Ga0.5In0.5P quantum well wires structures
Conductance oscillations in overgrown sub100nm InP/Ga0.25In0.75As quantum wires
Influence of electron-beam induced microporosity on masking properties of polymethylmethacrylate in wet etching of nanometer structures
Chemical gas etching of InP-based structures
Quantized conductance in a heterostructurally defined Ga0.25In0.75As/InP quantum wire
Damage-Induced Ky Plasma-Etching - On the Correlation of Results From Photoluminescence and Transport Characterization Techniques
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