W. J. Fan - Dissemin

Papers authored by W. J. Fan

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2015 Aliaksandr Hubarevich, Mikita Marus, Andrei Stsiapanau, Aliaksandr Smirnov, Junliang Zhao, Weijun Fan

, Hong Wang, Xiaowei Sun

Transparent conductive nanoporous aluminium mesh prepared by electrochemical anodizing

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Mikita Marus, Aliaksandr Hubarevich, Hong Wang, Aliaksandr Smirnov, Xiaowei Sun

, Weijun Fan

Optoelectronic performance optimization for transparent conductive layers based on randomly arranged silver nanorods

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2013 J. Chen, W. J. Fan

, D. H. Zhang, Q. Xu, X. W. Zhang

Electronic structure of Ge/SixSnyGe1−x−y quantum dots

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2012 Kain Lu Low, Yue Yang, Genquan Han, Weijun Fan

, Yee-Chia Yeo

Electronic band structure and effective mass parameters of Ge1−xSnx alloys

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Jian Chen, Weijun J. Fan

, Q. Xu, X. W. Zhang, S. S. Li, Jian-Bai Xia

Shape effects on the electronic structure and the optical gain of InAsN/GaAs nanostructures : from a quantum lens to a quantum ring

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2011 Yuan-Hui Zhu, Hong-Yu Yu, Wei-Jun Fan

Band structures and optical gain of strained GaAsxP1-x-yNy/GaP quantum wells

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D. W. Xu, Soon Fatt Yoon, Y. Ding, Cunzhu Z. Tong, Weijun J. Fan

, L. J. Zhao

1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process

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J. Chen, W. J. Fan

, Y. Ding, Q. Xu, X. W. Zhang, D. W. Xu, S. F. Yoon, D. H. Zhang

Nanostructure model and optical properties of InAs/GaAs quantum dot in vertical cavity surface emitting lasers

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J. Chen, W. J. Fan

, Q. Xu, X. W. Zhang

Electronic structure and optical gain of InAsPN/GaP(N) quantum dots

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2010 Y. Ding, W. J. Fan

, B. S. Ma, D. W. Xu, S. F. Yoon, S. Liang, L. J. Zhao, M. Wasiak, T. Czyszanowski, W. Nakwaski

Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure

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Qiang Xu, Weijun Fan

, Jer-Lai Kuo

The natural valence band offset of dilute GaAs1−xNx and GaAs: The first-principles approach

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J. Chen, W. J. Fan

, Q. Xu, X. W. Zhang

Electronic structure and optical gain of InAsSbN/InAs quantum dots

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Yuan-Hui Zhu, Qiang Xu, Wei-Jun Fan

, Jian-Wei Wang

Theoretical gain of strained GeSn0.02/Ge1-x-y′SixSny′ quantum well laser

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D. W. Xu, C. Z. Tong, S. F. Yoon, L. J. Zhao, Y. Ding, W. J. Fan

Self-heating effect in 1.3 μm p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers

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2009 Y. Ding, W. J. Fan

, D. W. Xu, C. Z. Tong, Y. Liu, L. J. Zhao

Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach

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J. Chen, W. J. Fan

, Q. Xu, X. W. Zhang, S. S. Li, J. B. Xia

Electronic structure and optical gain of truncated InAs1−xNx /GaAs quantum dots

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D. W. Xu, S. F. Yoon, C. Z. Tong, L. J. Zhao, Y. Ding, W. J. Fan

High-Temperature Continuous-Wave Single-Mode Operation of 1.3-$μ$m p-Doped InAs–GaAs Quantum-Dot VCSELs

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Y. Ding, W. J. Fan

, D. W. Xu, C. Z. Tong, S. F. Yoon, D. H. Zhang, L. J. Zhao, W. Wang, Y. Liu, N. H. Zhu

Fabrication and modulation characteristics of 1.3 µm p-doped InAs quantum dot vertical cavity surface emitting lasers

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J. Chen, X. W. Zhang, W. J. Fan

, Fan Wj, Q. Xu, Zhang Xw, S. S. Li, Li Ss, Xia Jb, J. B. Xia

Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots

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C. Z. Tong, D. W. Xu, S. F. Yoon, Y. Ding, W. J. Fan

Temperature Characteristics of 1.3-$μ$m p-Doped InAs–GaAs Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

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Papers authored by W. J. Fan