Tetsuo Kodera - Dissemin

Papers authored by Tetsuo Kodera

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2015 K. Horibe, K. Yamada, T. Kodera

, S. Oda

Few-Electron and Few-Hole Regimes in Silicon Double Quantum Dots

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野口智弘, 許正昱, Tomohiro Noguchi, 宇佐美浩一, 河野行雄, 小寺哲夫, 小田俊理, Marolop Simanullang, Simanullangmarolop, Zhengyu Xu, Koichi Usami, Yukio Kawano, Tetsuo Kodera

, Shunri Oda

A Ge/Si core/shell nanowire with controlled low temperature grown Si shell thickness

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This paper was not found in any repository, but could be made available legally by the author.

野口智弘, 森田広大, 許正昱, 小寺哲夫, 河野行雄, 小田俊理, Tomohiro Noguchi, Kodai Morita, Marolop Simanullang, Zhengyu Xu, Koichi Usami, Tetsuo Kodera

, Yukio Kawano, Shunri Oda

Ge/Si core/shell nanowires with controlled low temperature grown Si shell thickness

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T. Noguchi, K. Morita, M. Simanullang, Z. Xu, K. Usami, T. Kodera

, S. Oda

Fabrication and Thermo-electric Properties of Ge/Si Core/Shell Nanowires

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T. Honda, K. Horibe, R. Mizokuchi, Lu Yi, K. Iwasaki, S. Hiraoka, T. Kodera

, S. Oda

Coupled quantum dot devices

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S. Furuyama, T. Iwasaki, M. Shimizu, J. Yaita, T. Kodera

, M. Hatano

Collection efficiency improvement of NV centers by selective growth of diamond

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堀部浩介, 小寺哲夫, 小田俊理, Kosuke Horibe, Tetsuo Kodera

, Shunri Oda

Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate

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堀部浩介, 小寺哲夫, 小田俊理, Kosuke Horibe, Tetsuo Kodera

, Shunri Oda

“Back-action-induced excitation of electrons in a silicon quantum dot with a single electron transistor charge sensor

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This paper is made freely available by the publisher.

Junichi Hasegawa, Masayuki Furuhashi, Shuhei Nakata, Takayuki Iwasaki, Munetaka Noguchi, Tetsuo Kodera

, Tadashi Nishimura, Mutsuko Hatano

Analysis of effect of gate oxidation at SiC MOS interface on threshold-voltage shift using deep-level transient spectroscopy

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T. Honda, J. Yoneda, K. Takeda, T. Kodera

, S. Tarucha, S. Oda

Fabrication of a highly controllable Si-MOS quantum dot device

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K. Iwasaki, T. Kodera

, S. Oda

Charge sensing of p-channel double quantum dots fabricated on (110) silicon substrate

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Tetsuo Kodera

, Kosuke Horibe, Shunri Oda

Devices Architectures andTechnology for Quantum Computing

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Kenta Takeda, Jun Kamioka, Toshiaki Obata, Tomohiro Otsuka, Takashi Nakajima, Matthieu Delbecq, Shinichi Amaha, Jun Yoneda, Akito Noiri, Retsu Sugawara, Tetsuo Kodera

, Shunri Oda, Seigo Tarucha

Single-electron spin resonance in a Si/SiGe double quantum dot with a micromagnet

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Y. Yamaoka, T. Kodera

, S. Oda

Fabrication and characterization of physically-defined double quantum dots without unintentional localized states on highly-doped silicon substrate

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2014 長谷川淳一, 野々口浩史, 岩崎孝之, 小寺哲夫, 正. 西村, 波多野睦子, J. Hasegawa, M. Noguchi, M. Furuhashi, S. Nakata, T. Iwasaki, T. Nishimura, T. Kodera

, M. Hatano

Effect of gate oxide process at SiC-MOS interface on threshold voltage shift analyzed by DLTS

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T. Kodera

, M. Hatano

Deep-level states and defect states in silicon carbide

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Tetsuo Kodera

Quantum devices using group IV materials

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T. Kodera

Few-carrier regimes in lithographically-defined Si quantum dots

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宏. 山田, 小寺哲夫, 蒲原知宏, 小田俊理, Ko Yamada, Tetsuo Kodera

, Tomohiro Kambara, Shunri Oda

Fabrication and characterization of p-channel Si double quantum dots

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T. Kodera

, K. Horibe, T. Kambara, K. Yamada, R. Mizokuchi, Y. Lu, S. Ihara, S. Oda

Silicon quantum dot devices using metal-insulator-semiconductor structures

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Papers authored by Tetsuo Kodera