Chuanju Wang
0000-0001-9966-6694
3 papers found
Refreshing results…
Interface dipole induced threshold voltage shift in the Al2O3/GaN heterostructure
Monolithic β -Ga2O3 NMOS IC based on heteroepitaxial E-mode MOSFETs
Highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer
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