Georg Hoffmann
0000-0002-0575-3920
10 papers found
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Adsorption-controlled plasma-assisted molecular beam epitaxy of LaInO3 on DyScO3 (110): Growth window, strain relaxation, and domain pattern
Erratum: “Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources” [APL Mater. 9, 111110 (2021)]
Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy
Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to β -Ga2O3
Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources
Erratum: “Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy,” [APL. Mater. 9, 031101 (2021)]
Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass
Efficient suboxide sources in oxide molecular beam epitaxy using mixed metal + oxide charges: The examples of SnO and Ga2O
Spin generation in completely MBE-grown Co2FeSi/MgO/GaAs lateral spin valves
Epitaxial growth of Co2FeSi/MgO/GaAs(0 0 1) heterostructures using molecular beam epitaxy
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