Debdulal Kabiraj
0000-0002-1417-9596
7 papers found
Refreshing results…
Monitoring of the recovery of ion-damaged 4H-SiC with in situ synchrotron X-ray diffraction as a tool for strain-engineering
Disorder-induced crossover of Mott insulator to weak Anderson localized regime in an argon-irradiated NdNiO3 film
100 Mev Ag and 25 Kev He Induced Defects in 4H-SiC
Recovery of ion-damaged 4H-SiC under thermal and ion beam-induced ultrafast thermal spike-assisted annealing
Controlled generation of photoemissive defects in 4H-SiC using swift heavy ion irradiation
300 keV Ar ion induced effects in GaAs and 4H-SiC
Intense ionizing irradiation-induced atomic movement toward recrystallization in 4H-SiC
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