All papers authored by Felipe Kremer
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2021
Jun Peng 
,
Daniel Walter ,
Yuhao Ren ,
Mike Tebyetekerwa ,
Yiliang Wu ,
The Duong ,
Qiaoling Lin ,
Juntao Li ,
Teng Lu ,
Md Arafat Mahmud ,
Olivier Lee Cheong Lem,
Shenyou Zhao ,
Wenzhu Liu,
Yun Liu ,
Heping Shen
and 7 other authors
,
Daniel Walter ,
Yuhao Ren ,
Mike Tebyetekerwa ,
Yiliang Wu ,
The Duong ,
Qiaoling Lin ,
Juntao Li ,
Teng Lu ,
Md Arafat Mahmud ,
Olivier Lee Cheong Lem,
Shenyou Zhao ,
Wenzhu Liu,
Yun Liu ,
Heping Shen
and 7 other authors
Nanoscale localized contacts for high fill factors in polymer-passivated perovskite solar cells
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2020
Zhen Liu ,
Teng Lu ,
Fei Xue ,
Hengchang Nie,
Ray Withers ,
Andrew Studer,
Felipe Kremer ,
Narendirakumar Narayanan,
Xianlin Dong,
Dehong Yu ,
Longqing Chen ,
Yun Liu ,
Genshui Wang
,
Teng Lu ,
Fei Xue ,
Hengchang Nie,
Ray Withers ,
Andrew Studer,
Felipe Kremer ,
Narendirakumar Narayanan,
Xianlin Dong,
Dehong Yu ,
Longqing Chen ,
Yun Liu ,
Genshui Wang
Lead-free (Ag,K)NbO 3 materials for high-performance explosive energy conversion
Download from doi.org
2016
H. S. Alkhaldi ,
Tuan T. Tran ,
F. Kremer ,
J. S. Williams
,
Tuan T. Tran ,
F. Kremer ,
J. S. Williams
The influence of capping layers on pore formation in Ge during ion implantation
Download from uu.diva-portal.org
H. S. Alkhaldi,
F. Kremer ,
T. Bierschenk ,
J. L. Hansen,
A. Nylandsted Larsen,
J. S. Williams,
M. C. Ridgway
,
T. Bierschenk ,
J. L. Hansen,
A. Nylandsted Larsen,
J. S. Williams,
M. C. Ridgway
Porosity as a function of stoichiometry and implantation temperature in Ge/Si1−xGex alloys
Download from www.researchgate.net
2015
R. Feng,
F. Kremer ,
D. J. Sprouster,
S. Mirzaei,
S. Decoster,
C. J. Glover,
S. A. Medling,
L. M. C. Pereira ,
S. P. Russo,
M. C. Ridgway
,
D. J. Sprouster,
S. Mirzaei,
S. Decoster,
C. J. Glover,
S. A. Medling,
L. M. C. Pereira ,
S. P. Russo,
M. C. Ridgway
Enhanced electrical activation in In-implanted Ge by C co-doping
Download from www.researchgate.net
R. Feng,
F. Kremer ,
D. J. Sprouster,
S. Mirzaei,
S. Decoster,
C. J. Glover,
S. A. Medling,
S. P. Russo,
M. C. Ridgway
,
D. J. Sprouster,
S. Mirzaei,
S. Decoster,
C. J. Glover,
S. A. Medling,
S. P. Russo,
M. C. Ridgway
Structural and electrical properties of In-implanted Ge
Download from www.researchgate.net
S. Mirzaei,
F. Kremer ,
D. J. Sprouster,
L. L. Araujo ,
R. Feng,
C. J. Glover,
M. C. Ridgway
,
D. J. Sprouster,
L. L. Araujo ,
R. Feng,
C. J. Glover,
M. C. Ridgway
Formation of Ge nanoparticles in SiOxNy by ion implantation and thermal annealing
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