Stephan Aussen
0000-0001-9083-5404
7 papers found
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Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al2O3/TiOx‐Based Memristive Devices
SET Kinetics of Ag/HfO2-Based Diffusive Memristors under Various Counter-Electrode Materials
Moisture Effect on the Threshold Switching of TOPO-Stabilized Sub-10 nm HfO2 Nanocrystals in Nanoscale Devices
Effect of electron conduction on the read noise characteristics in ReRAM devices
Cation diffusion in polycrystalline thin films of monoclinic HfO2 deposited by atomic layer deposition
Evolution of short-range order in chemically and physically grown thin film bilayer structures for electronic applications
Memristive Devices Formed By ALD Metal Oxide Growth on a Hafnium Layer – Study of the Interfacial HfO2 Formation
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