Naoya Morioka
0000-0001-8007-2087
Kyoto University
28 papers found
Refreshing results…
Etching-limiting process and origin of loading effects in silicon etching with hydrogen chloride gas
Size and geometric effects on conduction band structure of GaAs nanowires
Orientation and Shape Effects on Ballistic Transport Properties in Gate-All-Around Rectangular Germanium Nanowire nFETs
Orientation and size effects on ballistic electron transport properties in gate-all-around rectangular germanium nanowire FETs
Rate Determining Process and Loading Effects in Si Etching with HCl Gas
Bandgap shift by quantum confinement effect in 〈100〉 Si-nanowires derived from threshold-voltage shift of fabricated metal-oxide-semiconductor field effect transistors and theoretical calculations
Quantum-confinement effect on holes in silicon nanowires: Relationship between wave function and band structure
Mobility oscillation by one-dimensional quantum confinement in Si-nanowire metal-oxide-semiconductor field effect transistors
Missing publications? Search for publications with a matching author name.