Qi Liu
0000-0001-7062-831X
47 papers found
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Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode
A Self-Rectification and Quasi-Linear Analogue Memristor for Artificial Neural Networks
Fast Switching $β$ -Ga2O3 Power MOSFET With a Trench-Gate Structure
High-Performance Metal-Organic Chemical Vapor Deposition Grown $ɛ$ -Ga2O3 Solar-Blind Photodetector With Asymmetric Schottky Electrodes
Vacancy‐Induced Synaptic Behavior in 2D WS 2 Nanosheet–Based Memristor for Low‐Power Neuromorphic Computing
Enhancement-Mode $β$ -Ga2O3 Metal–Oxide–Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio
Memory Switching and Threshold Switching in a 3D Nanoscaled NbOX System
Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory
Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films
A Few-Step and Low-Cost Memristor Logic Based on MIG Logic for Frequent-Off Instant-On Circuits in IoT Applications
Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory
A Ti/AlOx/TaOx/Pt Analog Synapse for Memristive Neural Network
Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films
Unveiling the Switching Mechanism of a TaOx/HfO2 Self-Selective Cell by Probing the Trap Profiles With RTN Measurements
Proton Radiation Effects on Y-Doped HfO2-Based Ferroelectric Memory
C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3
Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application
Short-Term and Long-Term Plasticity Mimicked in Low-Voltage Ag/GeSe/TiN Electronic Synapse
Origin of negative resistance in anion migration controlled resistive memory
Investigation of Retention Behavior of TiOx/Al2O3 Resistive Memory and Its Failure Mechanism Based on Meyer–Neldel Rule
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